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| 2SC5120 Silicon NPN Epitaxial Application TO-126FM High frequency amplifier Features * Excellent high frequency characteristics fT = 500 MHz typ * High voltage and low output capacitance VCEO = 150 V, Cob = 5.0 pF typ * Suitable for wide band video amplifier 12 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC ic(peak) PC Ratings 150 150 3 0.2 0.4 1.4 Unit V V V A A W -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------- 8*1 -------------------------------------------------------------------------------------- Junction temperature Storage temperature Note: 1. Tc = 25C Tj Tstg 150 -55 to +150 C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SC5120 Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO ICBO IEBO hFE VCE(sat) fT Cob Min 150 Typ -- Max -- Unit V Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = VCB = 100 V, IE = 0 VEB = 3 V, IC = 0 VCE = 10 V, IC = 10 mA IC = 50 mA IB = 5 mA VCE = 20 V IC = 50 mA VCB = 30 V, IE = 0 f=1MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 150 -- -- V -------------------------------------------------------------------------------------- -- -- 10 A -------------------------------------------------------------------------------------- Emitter cutoff current -- -- 10 A -------------------------------------------------------------------------------------- DC current transfer ratio 50 -- 150 -- -------------------------------------------------------------------------------------- Collector to emitter saturation voltage Gain bandwidth product -- -- 1.0 V -------------------------------------------------------------------------------------- 400 500 -- MHz -------------------------------------------------------------------------------------- Collector output capacitance -- 5.0 6.0 pF -------------------------------------------------------------------------------------- 2SC5120 Maximum Collector Dissipation Curve 8 Collector Power Dissipation Pc (W) I C (mA) 1.0 Area of Safe Operation 1 shot pulse (Ta = 25 C) 0.5 ic(peak) PW 6 Tc 0.2 0.1 0.05 I C max D 10 ms =1 Collector Current 4 C ms 2 1.4W pe (T rat c ion = 25 C O Ta ) 0.02 0.01 10 20 50 100 200 500 Collector to Emitter Voltage VCE (V) 0 50 100 150 200 Case Temperature Tc (C) Ambient Temperature Ta (C) Typical Output Characteristics 20 mA 18 mA 16 mA 0.2 mA A 14 12 m mA 10 mA 8 A 6m A 4m 1000 DC Current Transfer Ratio hFE 500 DC Current Transfer Ratio vs. Collector Current I C (A) 200 100 50 Tc = 75C 25C Collector Current 0.1 2 mA -25C 20 VCE = 10 V 10 1 2 5 10 20 50 100 200 Collector Current I C (mA) Tc = 25 C 0 IB= 0 5 10 Collector to Emitter Voltage VCE (V) 2SC5120 Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage V CE(sat) (mV) 1000 Base to Emitter Saturation Voltage vs. Collector Current 10 Base to Emitter Saturation Voltage V BE(sat) (V) I C / I B = 10 I C/ I B = 10 500 5 200 100 50 -25C Tc = 75C 2 1 -25C 25C 25C 0.5 Tc = 75C 20 10 0.2 0.1 1 2 5 10 20 50 100 200 Collector Current I C (mA) 1 2 5 10 20 50 100 200 Collector Current I C (mA) Collector Output Capacitance Cob (pF) Gain Bandwidth Product vs. Collector Current 1000 Collector Output Capacitance vs. Collector to Base Voltage 20 Gain Babdwidth Product f T (MHz) 500 10 200 100 50 5 IE = 0 f = 1 MHz 2 20 10 V CE = 20 V Tc = 25 C 1 2 5 10 20 50 100 200 Collector Current I C (mA) 1 1 2 5 10 20 50 100 Collector to Base Voltage V CB (V) 2SC5120 Package Outline 1.0 8.0 0.4 6.0 3.5 1.9 Max 3.2 +0.15 -0.1 3.2 0.4 11.0 0.5 1.7 15.6 0.5 0.65 0.7 2.29 0.5 2.29 0.5 Hitachi Code TO-126FM -- EIAJ -- JEDEC |
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